Innovative Design Process Enables Highest Performance Integrated Power Switches

Using a proprietary CuFET™ technique and proprietary MOSFET design, Silego delivers an elite family of integrated power switches that achieve world class RDSON and highest current carrying capability per square mm.


Integreted Power Switch

The 2.5 V - 5.5 V GFET™3 family and the 4.5 V - 24 V HFET™1 family offer ultra-stable RDSON across a wide input/supply range while also integrating a comprehensive suite of protection features. In 3 years, Silego has shipped over 1 billion integrated power switches to customers who value exceptional performance and reliability.


GREENFET™ 3 2.5 V - 5 V INTEGRATED POWER SWITCH

  • Ultra-small package sizes 1 mm² to 4 mm²
  • Ultra-low RDSON FET structures
    • nFETs: Singles as low as 4 mΩ; back-to-back reverse current block as low as 15 mΩ
    • pFETs: Single/duals as low as 23 mΩ
  • High steady-state FET Currents: 1 A to 9 A
  • Generates very low parasitic thermal gradients
  • Built-in system-level protection circuits
  • 125°C-Rated operation (Selected Part Numbers)
  • Very fast TTM to customer requests/feedback/revisions


HFET 1 4.5 V - 24 V INTEGRATED POWER SWITCH

  • Ultra-stable 13.3 mΩ RDSON across wide input/supply voltage range and temperature
  • 4.8 mm² footprint
  • Low thermal resistance for high current operation
  • 125°C-Rated operation (Selected Part Numbers)
  • Compared with FETs currently used in high-voltage applications, HFET integrates high-performance nFET structures, charge pumps, multiple protection and control circuits into feature rich single channel products


SILEGO’S INTEGRATED POWER SWITCHES AT A GLANCE

GreenFET3

GFET – 5 V IPS

  • Single N-Channel
  • Single P-Channel
  • Dual N-Channel
  • Dual P-Channel
  • Reverse blocking
HFET

HFET – Up to 24 V IPS

  • 4.5 V - 12 V Integrated Power Switches
  • 4.5 V – 24 V Integrated Power Switches